any changing of specification will not be informed individual BCP69 pnp transistor silicon epitaxial transistor r o h s c o m p l i a n t p r o d u c t h t t p : / / w w w . s e c o s g m b h . c o m e l e k t r o n i s c h e b a u e l e m e n t e t h e BCP69 is designed for guse in low voltage and medium power a p p l i c a t i o n s . d e s c r i p t i o n * vceo : -20v * ic : 1a f e atures e l e c t r i c a l c h a r a c t e r i s t i c s t a m b = 2 5 u n l e s s o t h e r w i s e s p e c i f i e d p a r a m e t e r s y m b o l m i n t y p . m a x u n i t e s t c o n d i t i o n s c o l l e c t o r - b a s e b r e a k d o w n v o l t a g e b v c b o - 2 5 - - v i c = - 1 0 0 m a , i e = 0 i c = - 1 m a , i b = 0 i e = - 1 0 m a , i c = 0 v c b = - 2 5 v , i e = 0 v e b = - 5 v , i c = 0 i c = - 1 m a , i b = - 1 0 0 m a v c e = - 1 v , i c = - 1 a v c e = - 1 0 v , i c = - 5 m a v c e = - 1 v , i c = - 5 0 0 m a v c e = - 1 v , i c = - 1 a v c e = - 5 v , i c = - 1 0 m a b v c e o - 2 0 - - v b v e b o - 5 - - v i c b o - - - 1 0 u a i e b o - - - 1 0 u a * v c e ( s a t ) 1 - - 5 0 0 m v * v b e ( o n ) - - 1 . 0 v * h f e 1 5 0 - * h f e 2 8 5 3 7 5 * h f e 3 6 0 - f t - 6 0 - m h - - - - z c o l l e c t o r - e m i t t e r b r e a k d o w n v o l t a g e e m i t t e r - b a s e b r e a k d o w n v o l t a g e c o l l e c t o r - b a s e c u t o f f c u r r e n t e m i t t e r - b a s e c u t o f f c u r r e n t c o l l e c t o r s a t u r a t i o n v o l t a g e b a s e - e m i t t e r v o l t a g e d c c u r r e n t g a i n g a i n - b a n d w i d t h p r o d u c t c - m a x i m u m r a t i n g s * ( t a m b = 2 5 , u n l e s s o t h e r w i s e s p e c i f i e d ) c o s y m b o l p a r a m e t e r v a l u e c o l l e c t o r c u r r e n t i c t s t g t j , j u n c t i o n a n d t o t a l p o w e r d i s s i p a t i o n v e b o p d e m i t t e r - b a s e v o l t a g e -5 1.5 v a w s t o r a g e t e m p e r a t u r e - 6 5 ~ - 1 5 0 c o v c e o c o l l e c t o r - e m i t t e r v o l t a g e - 20 v v c b o c o l l e c t o r - b a s e v o l t a g e - 25 v u n i t s -1 sot-223 0 1 - j u n - 2 0 0 2 r e v . a p a g e 1 o f 2 ref. min. max. ref. min. max. a 6.70 7.30 b 13 c typ. c 2.90 3.10 j 2.30 ref. d 0.02 0.10 1 6.30 6.70 e 0 c 10 c 2 6.30 6.70 i 0.60 0.80 3 3.30 3.70 h 0.25 0.35 4 3.30 3.70 5 1.40 1.80 BCP69 date code b c e o *pulse test: pulse width 380 s, duty cycle 2% millimeter millimeter
characteristic curves bc p 69 p np transistor silicon epitaxial transistor elektronische bauelemente any changing of specification will not be informed individual http://www.secosgmbh.com 01-jun-2002 rev. a page 2 of 2
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